In automotive, renewable energy, and high-power server applications, TSPAK devices with top-side cooling enable higher efficiency, increased power density, reduced EMI, and extended reliability. At this year’s PCIM Expo, WeEn Semiconductors, a leader in the development and production of cutting-edge bipolar power semiconductor products, will display its silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in highly thermally efficient TSPAK packages. Engineers will be able to reduce EMI, increase reliability, reduce form factors, and increase efficiency in a variety of high-power applications thanks to the new packages. The company’s top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16% in comparison to conventional devices by providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate. Consequently, the packages aid in simplifying the design of thermal management, reducing losses, and increasing power density. By minimizing or eliminating the need for complex PCB cooling, TSPAK devices reduce component count and drive down system costs.

Additionally, engineers can simplify system EMC compliance thanks to reduced EMI and the capacity to support a greater number of power cycles. The elimination of the thermal vias that are required in conventional bottom-side cooling designs allows the circulating current that generates the magnetic field to return directly to the source, resulting in EMI reduction. On-board chargers and high-to-low-voltage DC-DC converters in electric vehicles (EVs), automotive HVAC compressors, vehicle charging stations, photovoltaic (PV) renewable energy systems, and power supplies for computing and telecom servers are all ideal applications for WeEn’s TSPAK SiC technologies. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance (RDS(ON)) ratings from 20 to 150mΩ. There are a variety of voltages and current ratings for TSPAK SBDs, ranging from 650 V to 1200 V. Both automotive-grade and industrial-grade versions of each product are available. WeEn’s full line of bipolar products, including silicon-controlled rectifiers, power diodes, high voltage transistors, and silicon carbide (SiC) devices in a variety of other package options, will be on display at PCIM in Nuremberg from May 6-8, 2025. Visitors will be able to see the cutting-edge SiC TSPAK technology there.